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Croissance de couches minces de silicium pour applications photovoltaïques par epitaxie en phase liquide par évaporation du solvant

机译:通过溶剂蒸发通过液相外延生长用于光伏应用的薄硅层

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摘要

Crystalline Si thin films on low-cost substrates are expected to be alternatives to bulk Si materials for PV applications. Liquid Phase Epitaxy (LPE) is one of the most suitable techniques for the growth of high quality Si layers since LPE is performed under almost equilibrium conditions. We investigated a growth technology which allows growing Si epitaxial thin films in steady temperature conditions through the control of solvent evaporation from a metallic melt saturated with silicon: Liquid Phase Epitaxy by Solvent Evaporation (LPESE). We studied the main requirements regarding selection of solvent, crucible and growth ambient, and a first experimental set up is designed. An analytical model is described and discussed, aiming to predict solvent evaporation and Si crystallization rate. Growth experiments are implemented with a vertical dipping system. Growth procedure is presented and the influence, on Si growth, of melt convection, temperature gradient in the melt and Si-M reactivity with the material crucible are discussed. Solutions are proposed to improve and optimise the growth conditions. Experimentally, Si thin films were grown from Sn-Si and In-Si solution at temperatures between 900 and 1200°C under high vacuum. We are able to achieve epitaxial layers of several micrometers thickness (20-40µm). The predicted solvent evaporation rate and Si growth rate are in agreement with the experimental measurements. Regarding the structural quality, it is comparable to the crystal quality of layers grown by LPE. With In and In(Ga) melts, we can obtain P-type epitaxial layers with doping level in the range 1017 at.cm3, which is of great interest for the fabrication of solar cells. Finally, the growth of Si thin films on multicrystalline Si substrates by LPESE is discussed to assess the potential application of this technique.
机译:低成本衬底上的结晶硅薄膜有望替代光伏应用中的块状硅材料。液相外延(LPE)是用于生长高质量Si层的最合适的技术之一,因为LPE在几乎平衡的条件下进行。我们研究了一种生长技术,该技术可通过控制从饱和硅的金属熔体中蒸发掉的溶剂来控制硅在外延薄膜在稳定温度下的生长:通过溶剂蒸发(LPESE)进行液相外延。我们研究了有关溶剂,坩埚和生长环境选择的主要要求,并设计了第一个实验装置。描述和讨论了一个分析模型,旨在预测溶剂的蒸发和硅的结晶速率。生长实验是通过垂直浸入系统进行的。给出了生长过程,讨论了对流,熔体温度梯度以及与材料坩埚的Si-M反应性对Si生长的影响。提出了改善和优化生长条件的解决方案。实验上,在900-1200°C之间的高真空下,从Sn-Si和In-Si溶液中生长出Si薄膜。我们能够实现几微米厚(20-40µm)的外延层。预测的溶剂蒸发速率和Si生长速率与实验测量结果一致。关于结构质量,它与LPE生长的层的晶体质量相当。使用In和In(Ga)熔体,我们可以获得掺杂水平在1017 at.cm3​​范围内的P型外延层,这对于制造太阳能电池非常重要。最后,讨论了通过LPESE在多晶Si衬底上生长Si薄膜,以评估该技术的潜在应用。

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    Giraud Stephen;

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  • 年度 2014
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