Silicon on Insulator (SOI) has long been the forerunner of the CMOS technology inudthe last decade offering superior CMOS with higher speed, higher density, and excellentudradiation hardness and reduced second order effects for submicron VLSI applications. Theudtraditional SOI structure consists of a silicon dioxide layer sandwiched between a top thin siliconudlayer in which devices are built and the silicon substrate. Silicon-On-Insulator materials differudfrom normal bulk in that an insulating layer is present underneath the active device layer. Theudformation of a device quality single crystal silicon layer on top of the insulator is not a simpleudtask. Over the years, various methods have been developed and they are briefly described inudthis paper. However, the purpose of this paper is to review the fabrication process of bipolarudjunction transistors (BJT) on thin film Silicon on Insulator (TFSOI) wafer. As results, it can beudconcluded that fabricating, the base, emitter and collector regions of bipolar transistors will beudaccessible at the top surface of thin film silicon on insulator substrate. Additionally, fabricationudbipolar junction transistors by using planar process easier to be made inside laboratory’s schooludof physics USM.
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