Analysis of RTN signals in Resistive-Switching RAM device and its correlation with device operations

摘要

Filament rupture/restoration induced by movement of defects, e.g. oxygen ions/vacancies, is considered as the switching mechanism in HfO2 RRAM. However, details of filament alteration during switching are still speculative, due to the limitations of existing experiment-based probing techniques, impeding its understanding. In this work, for the first time, an RTN-based defect tracking technique is developed for RRAM devices, which can monitor the movements of defects and statistically provide their spatial and energy profiles. The critical filament region is experimentally identified and its alteration is observed and correlated with switching operations under various operation conditions. This provides a useful tool for further development of RRAM technology.