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The thermal and electrical properties of the promising semiconductor MXene Hf2CO2

机译:有希望的半导体的热和电性质  mXene Hf2CO2

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摘要

In this work, we investigate the thermal and electrical properties ofoxygen-functionalized M2CO2 (M = Ti, Zr, Hf) MXenes using first-principlescalculations. Hf2CO2 is found to exhibit a thermal conductivity better thanMoS2 and phosphorene. The room temperature thermal conductivity along thearmchair direction is determined to be 86.25-131.2 Wm-1K-1 with a flake lengthof 5-100 um, and the corresponding value in the zigzag direction isapproximately 42% of that in the armchair direction. Other important thermalproperties of M2CO2 are also considered, including their specific heat andthermal expansion coefficients. The theoretical room temperature thermalexpansion coefficient of Hf2CO2 is 6.094x10-6 K-1, which is lower than that ofmost metals. Moreover, Hf2CO2 is determined to be a semiconductor with a bandgap of 1.657 eV and to have high and anisotropic carrier mobility. At roomtemperature, the Hf2CO2 hole mobility in the armchair direction (in the zigzagdirection) is determined to be as high as 13.5x103 cm2V-1s-1 (17.6x103cm2V-1s-1), which is comparable to that of phosphorene. Broader utilization ofHf2CO2 as a material for nanoelectronics is likely because of its moderate bandgap, satisfactory thermal conductivity, low thermal expansion coefficient, andexcellent carrier mobility. The corresponding thermal and electrical propertiesof Ti2CO2 and Zr2CO2 are also provided here for comparison. Notably, Ti2CO2presents relatively low thermal conductivity and much higher carrier mobilitythan Hf2CO2, which is an indication that Ti2CO2 may be used as an efficientthermoelectric material.
机译:在这项工作中,我们研究了使用第一公属结构的氧化官能化M2CO2(M = TI,Zr,​​HF)MxEnes的热和电气性能。发现HF2CO2表现出优选的导热率和磷烯。沿着Thearmchair方向的室温导热率决定为86.25-131.2WM-1K-1,具有5-100μm的鳞片长度,并且曲折方向的相应值是扶手椅方向上的42%。还考虑了M2CO2的其他重要的热折叠,包括它们的特定热和热膨胀系数。 HF2CO2的理论室温热敏系数为6.094x10-6k-1,低于最多的金属。此外,确定HF2CO2是具有1.657eV的带隙的半导体,并具有高和各向异性载流子迁移率。在室温间,扶手椅方向上的HF2CO2空穴迁移率(在Z字形方向上)被确定为高达13.5×103cm 2V-1S-1(17.6×10 3CM2V-1S-1),其与磷烯相当。更广泛利用HF2CO2作为纳米电子材料的材料可能是由于其中等的带隙,令人满意的导热系数,低热膨胀系数,和透过的载流子迁移率。此处还提供了Ti2CO2和Zr2CO2的相应热和电性能以进行比较。值得注意的是,Ti2CO2Presents的导热率相对低,载体移动该载体HF2CO2具有更高的载体移动性,这是Ti2CO2可以用作有效的热电材料。

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