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First-Principles Study on the Mechanical Properties and Electronic Structure of V Doped WCoB and W2CoB2 Ternary Borides

机译:第一原理研究V掺杂WCOB和W2COB2三元硼化物的机械性能和电子结构

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摘要

For the purpose of exploring new hard materials and doping methods, the structural, mechanical and electronic properties of WCoB and W2CoB2 ternary boride were investigated with 0, 8.33, 16.67, 25 and 33.33 at.% V doping content and W2CoB2 with 0, 5, 10, 15 and 20 at.% V doping content by first-principle calculations. The cohesive energy, impurity formation energy and formation energy indicate the structural stability of V doped WCoB and W2CoB2. The elastic constants and mechanical properties imply that V doping leads to the decrement of shear modulus and the increment of ductility. Two different kinds of hardness models verify that V doping contributes to the decrement of hardness, which is closely related to shear modulus. The electronic structure is analyzed by DOS (density of states), PDOS (partial density of states) and charge density difference, which indicate the formation of weaker B–V covalent bonds, W–V and W–W metallic bonds lead to the decrement of mechanical properties. Compared with previous studies of Cr, Mn doped WCoB and W2CoB2, V doping leads to worse mechanical properties and hardness, indicating V may not be a suitable choice of doping transition elements.
机译:为了探索新的硬质材料和掺杂方法,研究WCOB和W2COB2三元硼化物的结构,机械和电子性质,用0,8.33,16.67,25和33.33。%V掺杂含量和W2cob2,0,5, 10,15和20.%V掺杂含量通过第一原理计算。粘性能量,杂质形成能量和形成能量表明V掺杂WCOB和W2COB2的结构稳定性。弹性常数和机械性能意味着V掺杂导致剪切模量的减少和延展性的增量。两种不同类型的硬度模型验证V掺杂有助于减少硬度,这与剪切模量密切相关。通过DOS(状态密度),PDOS(状态密度)和电荷密度差异分析电子结构,这表明了B-V共价键的形成,W-V和W-W金属键导致衰减机械性能。与先前的Cr,Mn掺杂WCOB和W2COB2的研究相比,V掺杂导致较差的机械性能和硬度,表示V可能不是掺杂过渡元件的合适选择。

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