Phase-change memory (PCM) is an emerging nonvolatile memory technology that promises very high performance.udIt currently uses discrete cell levels to represent data, controlledudby a single amorphous/crystalline domain in a cell. To improveuddata density, more levels per cell are needed. There exist a number of challenges, including cell programming noise, drifting ofudcell levels, and the high power requirement for cell programming.udIn this paper, we present a new cell structure called patterned cell, and explore its data representation schemes. Multipleuddomains per cell are used, and their connectivity is used toudstore data. We analyze its storage capacity, and study its error-correction capability and the construction of error-control codes.
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