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Mode coupling and cavity–quantum-dot interactions in a fiber-coupled microdisk cavity

机译:光纤耦合微盘腔中的模式耦合和腔-量子点相互作用

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摘要

A quantum master equation model for the interaction between a two-level system and whispering-gallery modes (WGMs) of a microdisk cavity is presented, with specific attention paid to current experiments involving a semiconductor quantum dot (QD) embedded in a fiber-coupled AlxGa1−xAs microdisk cavity. In standard single mode cavity QED, three important rates characterize the system: the QD-cavity coupling rate g, the cavity decay rate kappa, and the QD dephasing rate gamma[perpendicular]. A more accurate model of the microdisk cavity includes two additional features. The first is a second cavity mode that can couple to the QD, which for an ideal microdisk corresponds to a traveling wave WGM propagating counter to the first WGM. The second feature is a coupling between these two traveling wave WGMs, at a rate beta, due to backscattering caused by surface roughness that is present in fabricated devices. We consider the transmitted and reflected signals from the cavity for different parameter regimes of {g,beta,kappa,gamma[perpendicular]}. A result of this analysis is that even in the presence of negligible roughness-induced backscattering, a strongly coupled QD mediates coupling between the traveling wave WGMs, resulting in an enhanced effective coherent coupling rate g=sqrt(2)g0 corresponding to that of a standing wave WGM with an electric field maximum at the position of the QD. In addition, analysis of the second-order correlation function of the reflected signal from the cavity indicates that regions of strong photon antibunching or bunching may be present depending upon the strength of coupling of the QD to each of the cavity modes. Such intensity correlation information will likely be valuable in interpreting experimental measurements of a strongly coupled QD to a bimodal WGM cavity.
机译:提出了一个两级系统与微盘腔的耳语画廊模式(WGM)之间相互作用的量子主方程模型,并特别关注当前的实验,该实验涉及嵌入在光纤耦合中的半导体量子点(QD) AlxGa1-xAs微盘腔。在标准单模腔QED中,三个重要的速率表征了系统的特性:QD腔耦合速率g,腔衰减率κ和QD相移速率γ[垂直]。微型磁盘腔体的更精确模型包括两个附加功能。第一个是可以耦合到QD的第二腔模式,对于理想的微盘,该模式对应于与第一WGM反向传播的行波WGM。第二个特征是这两个行波WGM之间的比率为β的耦合,这是由于制造的设备中存在的表面粗糙度引起的反向散射所致。我们考虑{g,β,kappa,γ[垂直]}的不同参数方案从腔的发射和反射信号。该分析的结果是,即使在粗糙度引起的反向散射可忽略不计的情况下,强耦合QD也会介导行波WGM之间的耦合,从而导致有效相干耦合率g = sqrt(2)g0对应于a在QD位置具有最大电场的驻波WGM。另外,对来自腔的反射信号的二阶相关函数的分析表明,取决于QD与每个腔模的耦合强度,可能会出现强光子抗聚束或聚束的区域。这样的强度相关信息在解释强耦合QD到双峰WGM腔的实验测量中可能很有价值。

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