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Symmetry-Driven Band Gap Engineering in Hydrogen Functionalized Graphene

机译:氢官能化石墨烯的对称驱动带隙工程

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摘要

Band gap engineering in hydrogen functionalized graphene is demonstrated by changing the symmetry of the functionalization structures. Small differences in hydrogen adsorbate binding energies on graphene on Ir(111) allow tailoring of highly periodic functionalization structures favoring one distinct region of the moiré supercell. Scanning tunneling microscopy and X-ray photoelectron spectroscopy measurements show that a highly periodic hydrogen functionalized graphene sheet can thus be prepared by controlling the sample temperature (Ts) during hydrogen functionalization. At deposition temperatures of Ts = 645 K and above, hydrogen adsorbs exclusively on the HCP regions of the graphene/Ir(111) moiré structure. This finding is rationalized in terms of a slight preference for hydrogen clusters in the HCP regions over the FCC regions, as found by density functional theory calculations. Angle-resolved photoemission spectroscopy measurements demonstrate that the preferential functionalization of just one region of the moiré supercell results in a band gap opening with very limited associated band broadening. Thus, hydrogenation at elevated sample temperatures provides a pathway to efficient band gap engineering in graphene via the selective functionalization of specific regions of the moiré structure.
机译:通过改变官能化结构的对称性来证明氢官能化石墨烯中的带隙工程。 IR(111)上石墨烯上的氢吸收结合能量的小差异允许剪裁高度周期性的官能化结构,优先于MoiréSupercell的一个不同区域。扫描隧穿显微镜和X射线光电子能谱测量表明,可以通过在氢官能化期间控制样品温度(TS)来制备高度周期性氢官能化石墨烯片。在TS = 645 k及以上沉积温度下,专门氢吸附石墨烯/ IR(111)莫尔结构的HCP区域。这一发现在通过密度泛函理论计算中发现的,就氢联器在FCC区域中的HCP区域中的氢簇略微优先考虑。角度分辨的光曝光光谱测量结果表明,MoiréSupercell的仅一个区域的优先官能化导致带隙开口,具有非常有限的相关带宽化。因此,在升高的样品温度下的氢化提供了通过莫尔结构的特定区域的选择性官能化在石墨烯中有效的带隙工程的途径。

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