METHOD OF PRODUCING BAND GAP IN GRAPHENE USING CS+ IONS AND GRAPHENE WITH A BAND GAP THEREFROM

摘要

The present invention relates to a technique for forming a band gap of 0.1 eV or more and 0.68 eV or less necessary for adsorbing cesium ions of low energy on graphene to apply the graphene to a semiconductor material and finely adjusting the size thereof through neutral cesium atom adsorption To a method capable of sufficiently stably forming a graphen having an ON state and an OFF state as channel materials which are essential for using an electronic device and a bandgap retaining graphen fabricated therefrom. The present invention also relates to a method for measuring the total size of such a band gap and a method for confirming adsorption amount of adsorbed cesium ions or neutral cesium.;