Test beam measurement of ams H35 HV-CMOS capacitively coupled pixel sensor prototypes with high-resistivity substrate

摘要

In the context of the studies of the ATLAS High Luminosity LHC programme,radiation tolerant pixel detectors in CMOS technologies are investigated. Toevaluate the effects of substrate resistivity on CMOS sensor performance, theH35DEMO demonstrator, containing different diode and amplifier designs, wasproduced in ams H35 HV-CMOS technology using four different substrateresistivities spanning from $mathrm{80}$ to $mathrm{1000~Omega cdot cm}$. Aglueing process using a high-precision flip-chip machine was developed in orderto capacitively couple the sensors to FE-I4 Readout ASIC using a thin layer ofepoxy glue with good uniformity over a large surface. The resulting assemblieswere measured in beam test at the Fermilab Test Beam Facilities with 120 GeVprotons and CERN SPS H8 beamline using 80 GeV pions. The in-time efficiency andtracking properties measured for the different sensor types are shown to becompatible with the ATLAS ITk requirements for its pixel sensors.