On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors

摘要

Within the frame of theory of anisotropic scattering, it was studied the relationud of values for specific resistance changes under the axial elastic deformations for manyvalleyud semiconductors, n-Ge and n-Si. The aspect ratio between values of the saturatedud specific resistance ρX (∞)strain for strain and analogous value for axial pressureud deformation ρX (∞)pressure was determined. It gives a possibility to obtain reliableud information concerning the value ρX (∞)strain even for the case when mobility of carriersud and, consequently, the value ρ = ρ(Х) are significantly decreased, for example, underud irradiation treatment of crystals.