We have fabricated a grating-gate InGaAs/GaAs field-effect transistorstructure with narrow slits between the grating gate fingers. The resonantphotoconductive response of this structure has been measured in thesub-terahertz frequency range. The frequencies of the photoresponse peakscorrespond to the excitation of the plasmon resonances in the structurechannel. The obtained responsivity exceeds the responsivity reported previouslyfor similar plasmonic terahertz detectors by two orders of magnitude due toenhanced coupling between incoming terahertz radiation and plasmon oscillationsin the slit-grating-gate field-effect transistor structure.
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