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Fabrication of continuous ultrathin ferroelectric films by chemical solution deposition methods

机译:化学溶液沉积法制备连续超薄铁电薄膜

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摘要

The integration of ferroelectrics in nanodevices requires firstly the preparation ofhigh-quality ultrathin films. Chemical solution deposition is considered a rapid andcost-effective technique for preparing high-quality oxide films, but one that hastraditionally been regarded as unsuitable, or at least challenging, for fabricating filmswith good properties and thickness below 100 nm. In the present work we explore thedeposition of highly diluted solutions of pure and Ca-modified lead titanates to prepareultrathin ferroelectric films, the thickness of which is controlled by the concentrationof the precursor solution. The results show that we are able to obtain single crystallinephase continuous films down to 18 nm thickness, one of the lowest reported usingthese methods. Below that thickness, the films start to be discontinuous, which isattributed to a microstructural instability that can be controlled by an adequate tailoringof the processing conditions. The effect of the reduction of thickness on thepiezoelectric behavior is studied by piezoresponse force microscopy. The resultsindicate that films retain a significant piezoelectric activity regardless of their lowthickness, which is promising for their eventual integration in nanodevices, forexample, as transducer elements in nanoelectromechanical systems.
机译:铁电体在纳米器件中的集成首先需要制备高质量的超薄膜。化学溶液沉积被认为是制备高质量氧化膜的一种快速且具有成本效益的技术,但是传统上认为该化学方法对于制造具有良好性能和低于100 nm的厚度的膜是不合适的,或至少具有挑战性。在目前的工作中,我们探索了高稀释度的纯和钙改性的钛酸铅的溶液的沉积,以制备ultratrathin铁电薄膜,其厚度由前体溶液的浓度控制。结果表明,我们能够获得低至18 nm厚度的单晶相连续膜,这是使用这些方法报道的最低厚度之一。在该厚度以下,膜开始不连续,这归因于可以通过适当调整加工条件来控制的微结构不稳定性。通过压电响应力显微镜研究了厚度减小对压电行为的影响。结果表明,不管膜的低厚度如何,其都保留了显着的压电活性,这有望将其最终集成到纳米器件中,例如,作为纳米机电系统中的换能器元件。

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