Multi Carrier Transport Properties in HgCdTe Studied by Hall Effect and LightModulated Hall Effect

摘要

This report reviews the theory of Hall effect characterization of narrow gapsemiconductor material with multiple charge carriers. Mobility and concentration values for all the important carriers involved in the conductivity process are estimated through curve fitting. In the curve fitting process of Hall effect data, measurements of the field dependent resistivity are included. The conductivity coefficients, calculated from the field dependency of both the resistivity and the Hall coefficient, are analysed rather than the Hall coefficient itself. Different curve fitting alternatives are discussed in the report. In order to determine the electron mobility in a p-type HgCdTe layer, a characterization method called the light modulated Hall effect is introduced. The measured value of the electron mobility is inserted in the curve fitting procedure as a fixed parameter. By fixing the electron mobility, the quality of the curve fitting is improved.