A Semiconductor-Diode Parametric Amplifier at Microwave Frequencies

摘要

Extensive measurements were made of the microwave charac-teristics of the type of diode used in the experimental para¬metric amplifier, with emphasis on the measurement of series resistance. For this diode, a welded-contact germanium diode, the series resistance was a function of frequency, decreasing at a rate of nearly 3 db per octave over the frequency range of 500 Mc to 3,500 Mc. These measurements indicate that the germanium diode may be useful in parametric amplifiers at fre-quencies much higher than those predicted on the basis of low-frequency measurements.