AN EXPERIMENTAL SEMICONDUCTOR-DIODE PARAMETRIC AMPLIFIER AT S-BAND FREQUENCIES

摘要

A parametric amplifier was constructed which used a 1N263 diode as a non-linear reactance element. The signal frequency was near 2800 Mc and the pumping frequency near 5600 Mc. The amplifier had a high insertion loss but was able to produce a net power gain of 5.5 db. Non-linear power characteristics were displayed which were attributed to the self-biased operation of the diode. This type of amplifier has some inherent advantages over a three-frequency parametric amplifier. The use of a standard diode as a non-linear element shows the possibility of inexpensive experimentation in this field.