A Novel Technique for Fabricating Optoelectronic Materials

摘要

The objective of this study was to investigate the application of high-current ion-implantation and pulsed electron-beam annealing to fabricate optoelectronic materials for heterostructural, injection electroluminescent devices and detectors. Gallium arsenide (GaAs) substrates were implanted at room temperature with P and Ga to form GaAs1-xPx, or were implanted with Al and As to form Ga1-xAlxAs. A large-area pulsed electron beam was used to melt only the radiation-damaged implanted surface layer which underwent epitaxial regrowth upon cooling. Samples were analyzed for crystal structure and composition only. Reflected electron diffraction confirmed the epitaxial single crystal structure of the surface. Auger spectroscopy with ion sputtering showed that the maximum value of x achieved for either compound (GaAsP or GaAlAs) was 0.1, a limit imposed by ion sputtering during implantation. The trinary compound films were approximately 500 nm thick. Graphs and photographs illustrate the text.