Semiconductor Measurement Technology: The Capabilities and Limitations of Auger Sputter Profiling for Studies of Semiconductors

摘要

Materials characterization is a critical area in current silicon integrated circuit technology. Those techniques that are commonly used include Auger sputter profiling, X-ray photoelectron spectroscopy, secondary ion mass spectrometry, and Rutherford backscattering. All of these techniques have unique capabilities and limitations for studies of silicon device structures. In this paper, the authors describe the capabilities and limitations of Auger sputter profiling especially with regard to sensitivity, spatial resolution, depth resolution, and chemical state determination. Although much of the discussion centers on Auger sputter profiling, the results are also applicable to X-ray photoelectron spectroscopy and secondary ion mass spectrometry.