Dark Transient Capacitance Study of Deep Levels in Green-Emitting GaP LED's

摘要

The work is concerned with a study of deep levels in green emitting GaP Light Emitting Diodes prepared by Zn-diffusion in liquid phase epitaxial n-type layers. The technique used is single shot dark capacitance transient measurements. This technique is basically used to alter the deep level charge population in the junction depletion region by changing the applied bias, and monitor the subsequent transient change in capacitance of Pn junction at a fixed temperature. Arrhenius plots are then obtained for the thermal emission rates measured from the transient analysis.