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Capacitance transient study of a bistable deep level in e−-irradiated n-type 4H–SiC

机译：电子照射N型4H-SIC中双稳态深层水平的电容瞬态研究

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F C Beyer; C G Hemmingsson; H Pedersen; A Henry; J Isoya; N Morishita; T Ohshima; E Janzén;
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年度 2012
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1. Capacitance transient study of a bistable deep level in e ~--irradiated n-type 4H-SiC [J] . Beyer F.C., Hemmingsson C.G., Pedersen H., Journal of Physics, D. Applied Physics: A Europhysics Journal . 2012,第45期

机译：电子辐照n型4H-SiC中双稳态深能级的电容瞬态研究
2. Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy [J] . Tran Thien Duc, Galia Pozina, Nguyen Tien Son, Journal of Applied Physics . 2016,第9期

机译：用深能级瞬态光谱法和少数载流子瞬态光谱法研究生长和电子辐照的n型GaN的深能级
3. Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies [J] . Mannan Mohammad A., Chaudhuri Sandeep K., Nguyen Khai V., Journal of Applied Physics . 2014,第22期

机译：Z1 / 2，EH5和Ci1深缺陷对n型4H-SiC外延层肖特基探测器性能的影响：α光谱和深能级瞬变光谱研究
4. Defect Evolution in Proton-Irradiated 4H SiC Investigated by Deep Level Transient Spectroscopy [C] . P. Leveque, D. Martin, B.G. Svensson, 4th European Conference on Silicon Carbide and Related Materials (ECSCRM 2002); Sep 2-5, 2002; Linkoeping, Sweden . 2002

机译：深能级瞬态光谱研究质子辐照的4H SiC的缺陷演化
5. STUDY OF DEEP LEVELS IN (100) AND (311)B MOLECULAR BEAM EPITAXIAL GALLIUM-ARSENIDE BY CONSTANT-CAPACITANCE DEEP LEVEL TRANSIENT SPECTROSCOPY. [D] . DEJULE, RUTHANNA YUSA. 1987

机译：恒定电容深层瞬态光谱法研究（100）和（311）B分子束表型砷化镓深层。
6. Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties [O] . Łukasz Gelczuk, Jan Kopaczek, Thomas B. O. Rockett, -1

机译：分子束外延在低温下生长的n型GaAsBi合金的深层缺陷及其对光学性能的影响
7. Deep level transient spectroscopic study of neutron-irradiated n-type 6H-SiC [O] . Fung S, Gong M, Ling CC, 2003

机译：中子辐照n型6H-siC的深能级瞬态光谱研究

Capacitance transient study of a bistable deep level in e−-irradiated n-type 4H–SiC

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