Some Mathematical Considerations Regarding the Calculation of Permanent Damage of Devices Due to EMP Pulses.

摘要

A mathematical analysis of the failure of semiconductor junctions due to EMP induced pulses is presented. Included in this discussion are:the effects of finite-size p-n junctions on maximum temperature buildup;an evaluation of interpulse cooling;and a determination of the response of these devices to damped periodic waveforms. Limitations of the results are presented. Such information will be generally useful for performing preliminary damage assessment and/or screening of devices.