Room-Temperature-Operation Visible-Emission Semiconductor Diode Lasers

摘要

There were two main approaches taken to develop shorter wavelength lasers. (1) Based on (AlGa)As and liquid-phase epitaxy, significant new results were obtained: Properties of these laser diodes (power output, spectra, and beam patterns), materials considerations, laser theory, and growth problems are discussed. The design of (AlGa)As layers is discussed from the vertical point of view, and various design curves are given. Horizontal structural requirements are also discussed. Experimental results from measurements done as a function of hydrostatic pressure are correlated with other results. (2) The first heterojunction laser structures using GaAs sub l-x P sub x and In sub y Ga sub l-y P at compositions, where the lattice constants are matched, were grown using vapor-phase growth technology and are described in detail, including experimental device results. Threshold current densities from 3,000 to 5,000 A per sq cm. and emission wavelengths from 6,520 A to 6,640 A were obtained at 77 K. The limiting factor in these devices is nonradiative recombination at the heterojunctions. Life tests on facet-coated (AlGa)As CW diodes are reported.