Complementary DMOS-VMOS integrated circuit structure

摘要

A high speed CMOS formed on a single semiconductor substrate includes a DMOS having an asymmetric channel and a VMOS with a relatively short channel length. The short channel length of the VMOS is achieved by forming a double diffusion along one edge of a V groove, or ion implanting boron into the apex of the V groove and diffusing a single layer to a relatively deep depth along both edges of the groove.