Satellite Power Systems (SPS) concept definition study. Volume 6: In-depth element investigation

摘要

The fabrication parameters of GaAs MESFET solid-state amplifiers considering a power added conversion efficiency of at least 80 and power gains of at least 10dB were determined. Operating frequency was 2.45 GHz although 914 MHz was also considered. Basic circuit to be considered was either Class C or Class E amplification. Two modeling programs were utilized. The results of several computer calculations considering differing loads, temperatures, and efficiencies are presented. Parametric data in both tabular and plotted form are presented.