Satellite Power Systems (SPS) Concept Definition Study. Volume 6:In-Depth Element Investigation.

摘要

The fabrication parameters of GaAs MESFET solid-state amplifiers considering a power added conversion efficiency of at least 80% and power gains of at least 10dB were determined. Operating frequency was 2.45 GHz although 914 MHz was also considered. Basic circuit to be considered was either Class C or Class E amplification. Two modeling programs were utilized. The results of several computer calculations considering differing loads, temperatures, and efficiencies are presented. Parametric data in both tabular and plotted form are presented.