Electron Hopping Energy Influence on the Specific Heat and Conductivity of Phosphorus Doped Silicon

摘要

The electronic specific heat and the dc conductivity of the uncompensated Si:P are calculated via a previously developed theory for impurity band in semiconductors. The theory is investigated further in order to take into account the effect of correlation, as well as overlap on the electron hopping energy integral via Heitler-London two-particle wave functions. The calculated specific heat and conductivity show rough agreement when compared to the experimental data over a wide range of donor impurity concentration. The comparison with AMO-MT calculation shows a large enhancement due to a stronger electron correlation. The results of the highly-correlated-electron-gas model and inhomogeneity model are shown for comparison.