Utilisation de la Mesure des Impedances Electrochimiques et Optoelectrochimiques pour la Caracterisation des Structures Solution Electrolytique/Dielectrique/Semiconducteur (EDS) (Use of Electrochemical and Photoelectrochemical Imp

摘要

A technique to characterize the semiconductor/dielectric interface is developed. It is based on the modulation of the light illuminating an electrolytic solution/dielectric/semiconductor system. The work is related to the development of GaAs family MOS and MIS structures, including passivation and other manufacturing processes involving semiconductor/dielectric interfaces. It is shown that the optoelectrochemical impedance can be measured by this method. The analysis of the impedance in relation to the modulation frequency allows the estimation of the energy levels and surface state concentration.