Optically Controlled GaAs Dual-Gate MESFET and Permeable Base Transistors.

摘要

Optically induced voltage and dc characteristics of the GaAs Dual-gate MESFET and the Permeable Base Transistor (PBT) with optical illumination at wavelength below 0.87 micrometer, were obtained and compared with GaAs MESFET. It was observed that PBT can handle higher current density when illuminated.