Radiation Hardened Detector Arrays for the Far and Extreme Infrared, Phase 1

摘要

Results of the optimization of epitaxial double layer detector arrays are presented. Different types of blocked impurity band (BIB) detector arrays with different doping levels of the IR sensitive layer were fabricated and measured. The best performance data are: NEP = 5 times 10 to the minus 17th power W/sqrt Hz, and current responsivity S = 2 A/W using a doping concentration of 4 times 10 to the 17th power P/cc. A two dimensional 4x10 elements BIB array was connected to a multiplexing cryogenic read out circuit giving NEP = 10 to the minus 16th power W/sqrt Hz; S = 2 A/W. The results are obtained without enhancing the low sensitivity of these devices to ionizing radiation which remains an order of magnitude lower than that of conventional extrinsic photoconducting detectors.