Re-Verification of the IRHN57133SE and IRHN57250SE for Single Event Gate Rupture and Single Event Burnout Online Source

摘要

Test results for hi-rel total dose hardened power MOSFETs, manufactured by International Rectifier on its new fabrication line in Temecula, California, are presented in this report. The IRHN57133SE and IRHN57250SE were tested to NASA test condition standards and requirements. The IRHN57133SE performed poorly when compared to the previous test data, while the IRHN57250SE showed considerable gains over parts of similar voltage and current rating. From these two tests, the initial results are that parts from the Temecula line are marginally comparable to the El Segundo line. Both parts experienced single event gate rupture (SEGR) and single event burnout (SEB), and all of the SEGR was from gate to drain. This observation is different from previous testing where devices exhibited gate-to-source SEGR. Since one of the two parts tested demonstrated an increased single event effect (SEE) response when compared to the same part from the previous fabrication line, it is recommended that all devices from this fabrication line be screened for SEE.