1/F Noise in the Optical Output of 3-5 Devices

摘要

A basic model to explain the observed 1/f noise in the output of several types ofsemiconductor lasers is presented. Possible electron density fluctuations in a PIN structure are discussed. The mobility fluctuations in the intrinsic region are stated as inducing fluctuations in the number of free electrons and holes, although the effect is slight for a short intrinsic region of a laser. The model is extended to include lasers having different mirror reflectivities. The wavelength dependence of the 1/f noise in the input power is studied experimentally. Proof of the dependence of the 1/f noise on the noncoherent emission in the laser operating region is given. The calculation and its experimental verification of the coherence between the 1/f noise in the two output beams of a laser are described. The 1/f noise in the output of a semiconductor laser amplifier is investigated. The main conclusion of the study is that the 1/f noise in the emission intensity of optoelectronic devices can be interpreted as fluctuations in the absorption coefficient as well as fluctuations in electron concentration.