Novel Materials Gainaspsb/gasb And Gainaspsb/inas For Room-temperature Optoelectronic Devices For A 3-5 μm Wavelength Range (gainaspsb/gasb And Gainaspsb/inas For 3-5 μm)

摘要

A novel class of narrow-bandgap semiconductor materials is proposed as well as heterostructures based on these materials and suitable for the fabrication of mid-infrared optoelectronic devices, such as room-temperature laser diodes and thermo-photovoltaic converters. Our experimental data on infrared emission of such materials demonstrate high effectiveness of photoluminescence in a wavelength range 3-3.4 μm at room temperature. Simulations of the operating characteristics of room-temperature laser diodes, based on suggested heterostructures, show that their threshold current does not exceed 1 kA cm~(-2) due to suppression of the CHHS Auger-recombination process.