Epitaxial growth of heterostructures based on InAsPSb and GaInAsPSb isoperiodical with GaSb

摘要

Quaternary InAs{sub}yP{sub}zSb{sub}(1-y-z) and pentanary Ga{sub}(1-x)In{sub}xAs{sub}yP{sub}zSb{sub}(1-y-z) solid solutions isoperiodical with GaSb were grown on GaSb (100) substrates by liquid phase epitaxy (LPE) in 0.02≤z≤0.1 and 0.9≤x≤0.97; 0.04≤z≤0.1 composition ranges respectively. The growth temperature was in 570-605°C range. Crystalline and photoluminescence (PL) properties of obtained epilayers were investigated. PL intensity of pentanary solid solutions (PSS) is considerably higher, than that of obtained earlier quaternary GaInAsSb with close values of bandgap E{sub}g.