Comparative Study of Phosphosilicate Glass on (100) Silicon by Furnace and RapidIsothermal Annealing

摘要

Phosphosilicate glass (PSG) is extensively used throughout the semiconductorindustry in the fabrication of integrated circuits. Rapid isothermal annealing based on incoherent sources of light is a very promising technique for fabricating micron and submicron integrated circuits. For submicron devices, a reduced thermal budget (e.g., product of processing temperature and time) is essential for minimizing lateral and vertical diffusion of dopants as well as suppressing various unwanted physical and chemical phenomena. In the case of rapid isothermal processing (RIP), the sample is thermally isolated and the heating and cooling are dominated by thermal radiations. The results of RIP and furnace annealed PSG samples are reported and the electrical and structural characteristics based of these two thermal treatments are compared.