A study of subterahertz HEMT monolithic oscillators

摘要

A detailed study of monolithic InP-based HEMT oscillators for subterahertz operation is presented. InAlAs/InGaAs HEMT's have been optimized for high frequency operation and showed very high maximum oscillation frequencies (f(sub max)) of 310 GHz using offset self-aligned gamma-gate technology. Power characteristics of HEMT oscillators are reported. An oscillation power of more than 10 mW was evaluated by large-signal analysis at 320 GHz using HEMT's with f(sub max) = 450 GHz, V(sub br) = 10 V and a gate width (W(sub g)) of 8 x 22.5 microns. Oscillator topology studies showed that complex feedback schemes such as dual and active feedback enhance the negative resistance. Push-push oscillator designs based on harmonic signal generation can finally be used to overcome the frequency barrier imposed by f(sub max).