Characterization of Ni on Si wafers: Comparison of surface analysis techniques.

摘要

This paper reports on a collaborative effort to review the capabilities of several approaches to trace surface analysis. As a test case, Ni contamination of Si wafers in the dose range 10(sup 14) to 10(sup 10)/cm(sup 2) has been chosen. Emphasis of this paper is the capabilities of SARISA (surface analysis by resonant ionization of sputtered atoms), as an example of laser postionization secondary neutral mass spectrometry (SNMS), for detection of contaminants in the near-surface region. Results on analyses of the same standard samples by other techniques will also be presented. These techniques include total reflection x-ray fluorescence (TXRF) and heavy ion backscattering spectrometry (HIBS). Results of this comparison show that there are several techniques that can accurately determine metal contaminations on Si wafers in this concentration range and that the method of choice depends on other considerations such as speed or accuracy of analysis.