Annealing of nitrogen-doped ZnSe at high pressures: Toward suppression of native defect formation

摘要

Pressure is shown to have a drastic effect an the annealing characteristics of p-type, nitrogen-doped ZnSe. Samples annealed in vacuum show decreased carrier concentrations and simultaneous formation of deep-donor-related luminescence, while samples annealed under pressure show suppression of this compensating donor. Results are interpreted as an increase in the formation energy of the compensating deep donor under pressure. In addition the samples annealed under pressure show emergence of a new, intense, green luminescence band centered at 2.44 eV. The magnitude of the shift of this Peak under applied stress suggests that it results from a recombination involving a deep acceptor.