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Defect transformations in nitrogen-doped CVD diamond during irradiation and annealing

机译:辐照和退火期间氮气掺杂CVD金刚石中的缺陷变换

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摘要

Nitrogen-doped CVD diamond treated with electron irradiation and subsequent annealing at temperatures from 860 to 1900 degrees C was studied using fluorescence imaging, optical absorption and photoluminescence. It was found that nitrogen impurity produces many optical centers active throughout the infrared and visible spectral ranges. The most prominent of them active in IR spectral range are the centers related to nitrogen-hydrogen complexes. They produce absorption lines at 2827, 2874, 2906, 2949, 2990, 3031, 3107, 3123 and 3310 cm(-1). Two characteristic absorptions at wavenumbers 1293 cm(-1) and 1341 cm(-1) were tentatively ascribed to a modified form of nitrogen A-aggregates. In the visible and near IR spectral ranges, characteristic nitrogen-related centers have zero-phonon lines (ZPLs) at 457, 462, 489, 498, 722.5, 852.5, 865.5, 868.5, 908, 921.5 and 924.5 nm. Some of them, e.g. 457, 462 and 498 nm centers, are unique of CVD diamond. It has been confirmed that the brightest pink color of electron-irradiated nitrogen-doped CVD diamond is produced by annealing at temperatures about 1000 degrees C. Annealing at temperatures over 1600 degrees C destroys the irradiation-induced pink color. It was found that the center 489 nm is a major absorption feature in the visible spectral range of electron-irradiated, nitrogen-doped CVD diamond. Green color of electron-irradiated, nitrogen-doped CVD diamond is caused by combined absorption of GR1 center and 489 nm center. It has been confirmed that NV defects produced in CVD diamond during growth are very temperature stable. They survive heating at temperatures at least 2000 degrees C. In contrast, NV defects produced by irradiation may anneal out at temperatures as low as 1600 degrees C. This much lower thermal stability of the radiation-induced NV defects is the result of their interaction with other radiation defects produced in their vicinity. A conclusion has been made that in nitrogen-doped CVD diamonds nitrogen atoms may form clusters. These clusters are probably the origin of the broad band luminescence at wavelengths 360, 390, 535 and 720 nm and a strong broadening of ZPLs of many optical centers.
机译:使用荧光成像,光学吸收和光致发光研究了用电子照射处理的氮掺杂CVD金刚石和随后在860至1900摄氏度的温度下退火。发现氮杂质产生许多活性的光学中心,在整个红外和可见的光谱范围内。最突出的IR光谱范围是与氮气复合物相关的中心。它们在2827,2874,2906,2949,2990,3031,3107,3123和3310cm(-1)中产生吸收素。暂时地临时地归因于波更1293cm(-1)和1341cm(-1)的两个特征吸收。在可见和接近的IR光谱范围内,特征氮相关中心具有457,462,489,498,722.5,852.5,865.5,868.5,908,921.5和924.5nm的零位线(ZPLS)。其中一些,例如, 457,462和498 NM中心是CVD钻石的独特。已经证实,通过在约1000摄氏度的温度下退火产生电子照射氮掺杂CVD金刚石的最亮粉红色。在超过1600摄氏度的温度下退火破坏了辐照诱导的粉红色。发现中心489nm是电子照射的氮掺杂CVD金刚石的可见光谱范围中的主要吸收特征。电子照射的绿色氮掺杂CVD金刚石是由GR1中心和489纳米中心的组合吸收引起的。已经证实,在生长过程中CVD金刚石中产生的NV缺陷非常温度稳定。它们在温度下在温度下加热至少2000℃。相反,通过照射产生的NV缺陷可以在低至1600摄氏度的温度下退出。这种辐射诱导的NV缺陷的这种较低的热稳定性是它们与其相互作用的结果其他辐射缺陷在其附近产生。已经结束,在氮气掺杂的CVD金刚石中,氮原子可以形成簇。这些簇可能是波长360,390,535和720nm处的宽带发光的起源,以及许多光学中心的Zpls的强大扩大。

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