Amorphization threshold in Si-implanted strained SiGe alloy layers

摘要

The authors have examined the damage produced by Si-ion implantation into strained Si(sub 1(minus)x)Ge(sub x) epilayers. Damage accumulation in the implanted layers was monitored in situ by time-resolved reflectivity and measured by ion channeling techniques to determine the amorphization threshold in strained Si(sub 1(minus)x)Ge(sub x) (x = 0.16 and 0.29) over the temperature range 30--110 C. The results are compared with previously reported measurements on unstrained Si(sub 1(minus)x)Ge(sub x), and with the simple model used to describe those results. They report here data which lend support to this model and which indicate that pre-existing strain does not enhance damage accumulation in the alloy layer.