Models of transport, gas-phase and surface chemistry in diamond chemical vapor deposition

摘要

This paper presents an analysis of the Chemical Vapor Deposition of diamond thin films in a direct-current (dc) arc-jet reactor. The analysis discussed here includes a model of the performance of the arc-jet hydrogen excitation source, chemistry in the free-stream region, diffusive transport and chemistry in the boundary layer and at the surface. The surface chemistry model includes pathways for deposition of diamond, as well as creation of defects in the diamond lattice.