Growth of mid-infrared emitting InAsSb/InAsP strained-layer superlattices using metal-organic chemical vapor deposition

摘要

We describe the metal-organic chemical vapor deposition os InAsSb/InAsP strained-layer superlattice (SLS) active regions for use in mid-infrared emitters. These SLSs were grown at 500 (degrees)C, and 200 torr in a horizontal quartz reactor using trimethylindium, triethylantimony, AsH(sub 3), and PH(sub 3). By changing the layer thickness and composition we have prepared structures with low temperature ((le)20K) photoluminescence wavelengths ranging from 3.2 to 5.0 (mu)m. Excellent performance was observed for an SLS light emitting diode (LED) and both optically pumped and electrically injected SLS layers. An InAsSb/InAsP SLS injection laser emitted at 3.3 (mu)m at 80 K with peak power of 100 mW.