首页> 外国专利> METHOD OF FORMING PrxCa1-xMnO3 THIN FILM HAVING PrMnO3/CaMnO3 SUPERLATTICE STRUCTURE BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION

METHOD OF FORMING PrxCa1-xMnO3 THIN FILM HAVING PrMnO3/CaMnO3 SUPERLATTICE STRUCTURE BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION

机译:金属有机化学气相沉积法形成具有PrMnO3 / CaMnO3超晶格结构的PrxCa1-xMnO3薄膜的方法

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a PrxCa1-xMnO3 thin film having a PMO/CMO superlattice structure by MOCVD.;SOLUTION: The method of forming the PrxCa1-xMnO3 thin film having a PMO/CMO superlattice structure by MOCVD comprises a step of preparing an organometallic compound and a solvent, and a step of mixing the organometallic compound and the solvent to form a PMO precursor and a CMO precursor. The PMO precursor and the CMO precursor are injected into the vaporizer of a MOCVD reaction chamber. The PMO precursor and the CMO precursor are alternately injected into the vaporizer of the MOCVD reaction chamber, so that a deposition parameter is selected to form a nano-size PCMO thin film or a PCMO thin film made of a crystalline substance. The selected deposition parameter is kept to deposit a PCMO thin-film seed having a desired concentration ratio between Pr and Ca on a specific portion of the PCMO thin film. The obtained PCMO thin film is annealed at a selected temperature for a selected time period.;COPYRIGHT: (C)2007,JPO&INPIT
机译:解决的问题:提供一种形成具有PMO / CMO超晶格结构的Pr x Ca 1-x MnO 3 薄膜的方法解决方案:通过以下方法形成具有PMO / CMO超晶格结构的Pr x Ca 1-x MnO 3 薄膜的方法MOCVD包括制备有机金属化合物和溶剂的步骤,以及将有机金属化合物和溶剂混合以形成PMO前体和CMO前体的步骤。将PMO前体和CMO前体注入MOCVD反应室的蒸发器中。将PMO前体和CMO前体交替注入MOCVD反应室的蒸发器中,从而选择沉积参数以形成纳米级的PCMO薄膜或由结晶物质制成的PCMO薄膜。保持选择的沉积参数,以在PCMO薄膜的特定部分上沉积具有Pr和Ca之间所需浓度比的PCMO薄膜晶种。将获得的PCMO薄膜在选定的温度下退火选定的时间段。版权所有:(C)2007,JPO&INPIT

著录项

  • 公开/公告号JP2007158318A

    专利类型

  • 公开/公告日2007-06-21

    原文格式PDF

  • 申请/专利权人 SHARP CORP;

    申请/专利号JP20060304400

  • 申请日2006-11-09

  • 分类号H01L21/316;H01L21/205;C23C16/40;H01L27/10;

  • 国家 JP

  • 入库时间 2022-08-21 21:14:14

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