DEPOSITION METHOD OF GRADING PRXCA1-XMNO3 THIN FILMS BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION METHOD

摘要

PROBLEM TO BE SOLVED: To provide a deposition method of grading PCMO thin films capable of manufacturing memory resistive elements in various constitutions through a film thickness for the appropriate operation of a memory device.;SOLUTION: Since Ca, Mn and Pr contained in a PCMO film have great influence on its switching characteristic, the precursors of Pr, Ca and Mn having the action of different deposition rates are selected concerning deposition parameters such as a deposition temperature and a vaporization temperature as a method of realizing a grading PCMO thin film for use in a RRAM memory device. Consequently, the individual deposition parameters during a deposition process are changed so as to deposit grading PCMO thin films with the inclined distribution of Pr, Ca or Mn.;COPYRIGHT: (C)2006,JPO&NCIPI