High-Power Reliable Operation of InGaAsP/InP Laser Bars at 1.73 (micro)m

摘要

InGaAsP/InP laser bars with an emission wavelength of 1.73 (micro)m have been211u001efabricated using compressively-strained multiple-quantum-well separate-211u001econfinement heterostructures. One-cm-wide, 0.7-fill-factor, diode bars are bonded 211u001eonto Si microchannel heatsinks. A maximum cw power of 16 W was produced from a 211u001eone-cm bar. Derated to SW cw, the extrapolated lifetime is 10,000 hours of 211u001eoperation with a 20% degradation in output power. A 10-bar microlensed diode 211u001earray with a one-square-cm aperture produced 200 W of peak power and was focused 211u001eonto a Cr:ZnSe slab laser. Over 3 watts of pulsed power and xxmw of average power 211u001ewas generated at a wavelength of 2.5 (micro)m.