High-power, single-mode operation of an InGaAsP/InP laser with a grooved transverse junction using gain stabilization

摘要

The high-power performance of a groove InGaAsP/InP transverse junction laser fabricated on a semi-insulating InP substrate has been investigated. Peak power of over 250 mW/facet for pulsed operation and 11 mW/facet cw are achieved with stable fundamental mode operation and narrow beam width. It is suggested that the single-mode operation is caused by a gain stabilizing mechanism related to the transverse junction injection profiles.