Atomic-Scale Engineering of the SiC-SiO2 Interface

摘要

We report results from three distinct but related thrusts that aim to elucidate211u001ethe atomic-scale structure and properties of the Sic-SiO(sub 2) interface. (a) 211u001eFirst-principles theoretical calculations probe the global bonding arrangements 211u001eand the local processes during oxidation; (b) Z-contrast atomic-resolution 211u001etransmission electron microscopy and electron-energy-loss spectroscopy provide 211u001eimages and interface spectra, and (c) nuclear techniques and electrical 211u001emeasurements are used to profile N at the interface and determine interface trap 211u001edensities.