Field emission from carbon films deposited by VHF CVD on difference substrates

摘要

As previously demonstrated, non-diamond carbon (NDC) films deposited at low211u001etemperatures 200-300 C on silicon tips reduced the threshold of field emission. 211u001eIn this paper we will present the results of the study of field emission from 211u001eflat NDC films prepared by VHF CVD. Emission measurements were performed in a 211u001ediode configuration at approximately 10(sup (minus)10) Torr. NDC films were 211u001edeposited on ceramic and on c-Si substrates sputter coated with layers of Ti, Cu, 211u001eNi and Pt. The back contact material influences the emission characteristics but 211u001enot as a direct correlation to work function. A model of field emission from 211u001emetal-NDC film structures will be discussed.