Retention and Switching Kinetics of Protonated Gate Field Effect Transistors;Applied Physics Letters

摘要

The switching and memory retention time has been measured in 50 mu m gatelength 'pseudo'-non-volatile memory MOSFETs containing, protonated 40 nm gate oxides. Times of the order of 3.3. seconds are observed for fields of 3 MV cm(-1). The retention time with protons placed either at the gate oxide/substrate or gate oxide/gate electrode interfaces is found to better than 96% after 5000 seconds. Measurement of the time dependence of the source-drain current during switching provides clear evidence for the presence of dispersive proton transport through the gate oxide.