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Electron Microscopy Studies of Potential 1-eV Bandgap Semiconductor Compounds ZnGeAs2 and Zn3As2 Grown by MOVPE: Preprint.

机译：电子显微镜研究潜在的1-eV带隙半导体化合物ZnGeas2和Zn3as2由mOVpE生长：预印。

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Presented at the 2001 NCPV Program Review Meeting: Electron microscopy studies of MOVPE layers of materials that are potential 1-eV bandgap semiconductors for solar cells.

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作者
Norman, A. G.;
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年度 2001
页码 1-4
总页数 4
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Meetings; Electron microscopy; Solar cells; Semiconductors; Junction; Vapor phase epitaxy; Crystal growth; Substrates; Metal organic vapor phase epitaxy; MOVPE layers;

机译：会议;电子显微镜;太阳能电池;半导体;结;气相外延;晶体生长;基板;金属有机气相外延; mOVpE层;

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专利

1. Study of luminescent centers annealing in wide bandgap semiconductors: Color cathodoluminescence-scanning electron microscopy [J] . E. N. Mokhov, A. D. Roenkov, G. V. Saparin, Scanning . 1998,第7期

机译：宽带隙半导体中发光中心退火的研究：彩色阴极发光-扫描电子显微镜
2. 1-eV InGaAsN/GaAs quantum well structure for high efficiency solar application grown by MOVPE [J] . T.H. Wu, Y.K. Su, R.W. Chuang, Journal of Crystal Growth . 2013,第maya1期

机译：通过MOVPE生长的1-eV InGaAsN / GaAs量子阱结构用于高效太阳能应用
3. A TEM investigation of Zn3As2 grown on (001) and (111) InP by MOVPE [J] . J. H. Neethling, G. J. Scriven, T. Krekels Journal of Materials Science . 2001,第16期

机译：通过MOVPE在（001）和（111）InP上生长的Zn3As2的TEM研究
4. Microstructural Properties and Defect Evolution on Nitride Compound Semiconductors Grown on Patterned Substrates: A Transmission Electron Microscopy Study [C] . Y.H. Kim, Y.K. Noh, S.H. Han, International Metallographic Society Annual meeting;Microscopy Society of America Annual Meeting;Microanalysis Society Annual meeting . 2011

机译：图案化衬底上生长的氮化物化合物半导体的微观结构特性和缺陷演化：透射电子显微镜研究
5. Computational studies of the metalorganic vapor phase epitaxy (MOVPE) of III-V compound semiconductors. [D] . Theodoropoulos, Constantinos. 1999

机译：III-V化合物半导体的金属有机气相外延（MOVPE）的计算研究。
6. Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE [O] . Xin Li, Matthew B. Jordan, Taha Ayari, -1

机译：MOVPE在晶圆级厚氮化硼层上的柔性金属-半导体-金属器件原型
7. Microstructural Properties and Defect Evolution on Nitride Compound Semiconductors Grown on Patterned Substrates: A Transmission Electron Microscopy Study [O] . Y Kim, Y Noh, S Han, 2011

机译：在图案化基板上生长的氮化物化合物半导体的微观结构性质和缺陷演化：透射电子显微镜研究

Electron Microscopy Studies of Potential 1-eV Bandgap Semiconductor Compounds ZnGeAs2 and Zn3As2 Grown by MOVPE: Preprint.

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