1-eV InGaAsN/GaAs quantum well structure for high efficiency solar application grown by MOVPE

摘要

In this article, we have demonstrated 1-eV energy band gap In_(0.22)GaAsN_y/GaAs multi-quantum well (MQW) solar cells grown by a metal organic vapor phase epitaxy (MOVPE) system. With nitrogen incorporation, the equivalent band gap energy of quantum well structure will decrease and reach near 1 eV. The structures of In_(0.22)GaAsN_y/GaAs MQWs were inserted into an intrinsic absorption layer for absorbing the incident light in the longer wavelength region. From the measurement results, the absorption band edge of Iri_(0.22)GaAsN_y/GaAs MQW solar cells is extended over 1300 nm. On the other hand, in order to improve the device performance pre-deteriorated by nitrogen incorporation, a hybrid structure which consists of In_(0.22)GaAs/GaAs and In_(0.22)GaAsN_(0.043)/GaAs quantum wells is adopted; with this hybrid quantum well structure as the absorption layer, consequently the short circuit current is enhanced from 10.85 to 15.29 mA/cm2.